Title

Etch Damage and Deposition Repair of Vertical Cavity Surface Emitting Lasers

Contributing USMA Research Unit(s)

Electrical Engineering and Computer Science

Publication Date

1-12-2006

Publication Title

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006, Vol.24 (1), p.104-107

Document Type

Article

Abstract

Dielectric layers are often employed as etch masks for mesa and trench structures during vertical-cavity surface-emitting laser (VCSEL) fabrication. The removal of these mask layers by reactive ion etching results in unavoidable exposure of the top laser facet to sputtering. This sputtering is experimentally shown to impact the device performance. After a thickness of less than a quarter wavelength (∼60nm)" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">(∼60nm)(∼60nm) has been removed, the VCSELs are no longer able to achieve lasing threshold. Simulation indicates that the reason for this is a decrease in quality factor by more than an order of magnitude. Consistent with this explanation is that the damage can be partially repaired (allowing laser oscillation) by depositing SiO2" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">SiO2SiO2 to compensate for the missing semiconductor material.

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